Nitrogen Aggregation Induced by High-Pressure High-Temperature Pretreatment and Its Effect on the Apparent Charge-State Ratio of NV Centers in Diamond

LI Weijian; CHEN Ning; WANG Hongwei; WANG Hao; ZHAO Shixiu; PAN Yilong

doi:10.11858/gywlxb.20261106

Volume 40 Issue 9

Sep 2026

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Article Contents

Chinese Journal of High Pressure Physics > 2026 > 40(9): 090110.

LI Weijian, CHEN Ning, WANG Hongwei, WANG Hao, ZHAO Shixiu, PAN Yilong. Nitrogen Aggregation Induced by High-Pressure High-Temperature Pretreatment and Its Effect on the Apparent Charge-State Ratio of NV Centers in Diamond[J]. Chinese Journal of High Pressure Physics, 2026, 40(9): 090110. doi: 10.11858/gywlxb.20261106

Citation:

LI Weijian, CHEN Ning, WANG Hongwei, WANG Hao, ZHAO Shixiu, PAN Yilong. Nitrogen Aggregation Induced by High-Pressure High-Temperature Pretreatment and Its Effect on the Apparent Charge-State Ratio of NV Centers in Diamond[J]. Chinese Journal of High Pressure Physics, 2026, 40(9): 090110. doi: 10.11858/gywlxb.20261106

Citation:

LI Weijian, CHEN Ning, WANG Hongwei, WANG Hao, ZHAO Shixiu, PAN Yilong. Nitrogen Aggregation Induced by High-Pressure High-Temperature Pretreatment and Its Effect on the Apparent Charge-State Ratio of NV Centers in Diamond[J]. Chinese Journal of High Pressure Physics, 2026, 40(9): 090110. doi: 10.11858/gywlxb.20261106

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Nitrogen Aggregation Induced by High-Pressure High-Temperature Pretreatment and Its Effect on the Apparent Charge-State Ratio of NV Centers in Diamond

doi: 10.11858/gywlxb.20261106

Institute of High Pressure Physics, School of Physical Science and Technology, Ningbo University, Ningbo 315211, Zhejiang, China

Received Date: 27 May 2026
Rev Recd Date: 26 Jun 2026

Available Online: 02 Jul 2026

Issue Publish Date: 05 Sep 2026

Abstract

Abstract

Formation of nitrogen-vacancy (NV) centers and their apparent charge-state response in high-pressure high-temperature (HPHT) type-Ⅰb diamond were investigated. Effects of the initial substitutional nitrogen content (C-center nitrogen), electron irradiation, vacuum annealing, and HPHT pretreatment on the photoluminescence (PL) behavior of NV centers were compared. Two groups of HPHT diamond single crystals with different C-center nitrogen contents were subjected to electron irradiation, vacuum annealing (600−1000 ℃), and HPHT pretreatment (5 GPa, 1100−1900 ℃). Fourier-transform infrared spectroscopy (FTIR), Raman spectroscopy, and photoluminescence spectroscopy were employed to analyze nitrogen aggregation, lattice state, and NV-related photoluminescence responses. The results show that high-nitrogen samples exhibit more pronounced NV-related emission, whereas irradiation-induced vacancies in the low-nitrogen samples tend to remain as GR1 centers. As the vacuum annealing temperature increases, the overall emission intensities of NV⁰ and NV⁻ increase, while the apparent photoluminescence response of NV⁻ relative to NV⁰ generally decreases. HPHT pretreatment does not directly generate a large number of NV centers but promotes nitrogen aggregation and modifies the apparent NV⁻/NV⁰ charge-state ratio during subsequent irradiation and annealing. These results indicate that HPHT pretreatment can serve as a preceding processing parameter for regulating the initial defect state before irradiation and the subsequent apparent charge-state ratio of NV centers.
- diamond,
- nitrogen-vacancy (NV) center,
- electron irradiation,
- vacuum annealing,
- high-pressure high-temperature

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References(27)

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