Synthesis and Characterization of P-Doped Diamond Crystals in the FeNiCo-C System under High Temperature and High Pressure

ZHANG Haobo; HU Meihua; LI Shangsheng; LIU Di; HE Shasha; LI Xiaoxiao; WANG Zhenyang

doi:10.11858/gywlxb.20251285

Volume 40 Issue 9

Sep 2026

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Chinese Journal of High Pressure Physics > 2026 > 40(9): 090113.

ZHANG Haobo, HU Meihua, LI Shangsheng, LIU Di, HE Shasha, LI Xiaoxiao, WANG Zhenyang. Synthesis and Characterization of P-Doped Diamond Crystals in the FeNiCo-C System under High Temperature and High Pressure[J]. Chinese Journal of High Pressure Physics, 2026, 40(9): 090113. doi: 10.11858/gywlxb.20251285

Citation:

ZHANG Haobo, HU Meihua, LI Shangsheng, LIU Di, HE Shasha, LI Xiaoxiao, WANG Zhenyang. Synthesis and Characterization of P-Doped Diamond Crystals in the FeNiCo-C System under High Temperature and High Pressure[J]. Chinese Journal of High Pressure Physics, 2026, 40(9): 090113. doi: 10.11858/gywlxb.20251285

Citation:

ZHANG Haobo, HU Meihua, LI Shangsheng, LIU Di, HE Shasha, LI Xiaoxiao, WANG Zhenyang. Synthesis and Characterization of P-Doped Diamond Crystals in the FeNiCo-C System under High Temperature and High Pressure[J]. Chinese Journal of High Pressure Physics, 2026, 40(9): 090113. doi: 10.11858/gywlxb.20251285

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Synthesis and Characterization of P-Doped Diamond Crystals in the FeNiCo-C System under High Temperature and High Pressure

doi: 10.11858/gywlxb.20251285

School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454003, Henan, China

Received Date: 26 Dec 2025
Rev Recd Date: 08 Feb 2026
Accepted Date: 14 Jul 2026

Available Online: 11 Feb 2026

Issue Publish Date: 05 Sep 2026

Abstract

Abstract

To investigate the effects of phosphorus doping on diamond crystal growth, diamond single crystals doped with phosphorus were synthesized along the (111) plane using the temperature gradient method. The experiments were conducted under conditions of 5.5 GPa and 1 300 ℃, with Fe₃P added into the FeNiCo-C system. The synthesized diamond samples were characterized by Fourier-transform infrared (FTIR) spectroscopy, Raman spectroscopy, photoluminescence (PL) spectroscopy, and X-ray photoelectron spectroscopy (XPS). With increasing Fe₃P addition, the diamond color gradually lightens, and the crystal morphology changes from octahedral to hexoctahedral. Moreover, the addition of Fe₃P alters the catalyst properties, leading to the increases of nitrogen solubility of the catalyst. Thus, fewer nitrogen atoms enter the diamond lattice, resulting in a decrease of nitrogen impurity content in the diamonds. Phosphorus doping increases internal stress and induces lattice distortion in the diamond crystal, resulting in degrading of the diamond quality. This conclusion is supported by the shift and broadening of the Raman peak. The incorporation of phosphorus atoms inhibits the formation of NV⁻ centers in diamond crystals. XPS results confirm the successful incorporation of phosphorus into the diamond lattice. This study provides useful insights for understanding the synthesis mechanism of phosphorus-doped diamond crystals, and supports potential applications of phosphorus-doped diamond crystals.
- high-temperature and high-pressure,
- diamond single crystal,
- superhard materials,
- phosphorus doping,
- n-type semiconductor

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References(34)

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