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GUO Hua, WANG Fan, ZHENG Baobing. High-Pressure Study on Structural Phase Transformation and Physical Properties of SrB2C2[J]. Chinese Journal of High Pressure Physics. doi: 10.11858/gywlxb.20251148
Citation: GUO Hua, WANG Fan, ZHENG Baobing. High-Pressure Study on Structural Phase Transformation and Physical Properties of SrB2C2[J]. Chinese Journal of High Pressure Physics. doi: 10.11858/gywlxb.20251148

High-Pressure Study on Structural Phase Transformation and Physical Properties of SrB2C2

doi: 10.11858/gywlxb.20251148
  • Available Online: 21 Aug 2025
  • Using the first-principles calculations based on density functional theory and the structure prediction method based on particle swarm optimization algorithm, this paper conducted a structural search for SrB2C2 in the pressure range of 0-350 GPa, and successfully determined that SrB2C2 belongs to the tetragonal system tI20-SrB2C2 under normal pressure, and belongs to the orthorhombic system oF40- SrB2C2 under high pressure. Based on the enthalpy difference curve, the phase transition pressure of SrB2C2 was determined to be 44.7 GPa. The stability of tI20-SrB2C2 and oF40- SrB2C2 at the corresponding pressure and the possibility of experimental synthesis were verified by calculating the phonon spectrum, elastic constants and formation enthalpy. It can be seen from the Young's modulus and shear modulus as a function of orientations that tI20-SrB2C2 has higher degree of mechanical anisotropy than oF40- SrB2C2, which can be ascribed to the fact that the sp2-hybridized boron-carbon bonds form the layered structure of tI20-SrB2C2, while the boron-carbon bonds of oF40- SrB2C2 are mainly sp3-hybridized covalent bonds, forming a more stable three-dimensional tetrahedral network structure. The calculation of the electronic structure shows that SrB2C2 is an indirect band gap semiconductor, and the calculation of the electronic localization function shows that the boron-carbon bonds in tI20-SrB2C2 and oF40-SrB2C2 are sp2 and sp3 covalent bonds, respectively.

     

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