Quantum Magnetic Measurement under High Pressure Based on Color Centres in Silicon Carbide

LIU Lin; WANG Junfeng; LIU Xiaodi

doi:10.11858/gywlxb.20230750

Volume 37 Issue 6

Dec 2023

Turn off MathJax

Article Contents

Chinese Journal of High Pressure Physics > 2023 > 37(6): 060102.

LIU Lin, WANG Junfeng, LIU Xiaodi. Quantum Magnetic Measurement under High Pressure Based on Color Centres in Silicon Carbide[J]. Chinese Journal of High Pressure Physics, 2023, 37(6): 060102. doi: 10.11858/gywlxb.20230750

Citation:

LIU Lin, WANG Junfeng, LIU Xiaodi. Quantum Magnetic Measurement under High Pressure Based on Color Centres in Silicon Carbide[J]. Chinese Journal of High Pressure Physics, 2023, 37(6): 060102. doi: 10.11858/gywlxb.20230750

Citation:

PDF( 4884 KB)

Quantum Magnetic Measurement under High Pressure Based on Color Centres in Silicon Carbide

doi: 10.11858/gywlxb.20230750

LIU Lin^1
,,
WANG Junfeng²,
LIU Xiaodi^{1,*
,
,}

1.
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, Anhui, China
2.
College of Physics, Sichuan University, Chengdu 610065, Sichuan, China

Received Date: 10 Oct 2023
Rev Recd Date: 22 Nov 2023

Available Online: 12 Dec 2023

Issue Publish Date: 15 Dec 2023

Abstract

Abstract

The quantum precision magnetic measurement in high-pressure environments is of great significance for studying the evolution and structure of matter under an extreme environment. Given the challenges associated with achieving in-situ high-resolution magnetic detection under high pressure by using traditional methods, the proposed high-pressure quantum magnetic measurement based on solid-state color centres has made significant progress in recent years. This advancement is of great significance in advancing the study of matter under high pressure. And this paper primarily focuses on the research of quantum magnetic measurement using SiC color centres under high pressure. The optical and spin properties of silicon vacancy defects and divacancy defects in SiC under high pressure is reviewed. Furthermore, the magnetic phase transition of Nd₂Fe₁₄B is observed, and the critical temperature-pressure phase diagram of the superconductor YBa₂Cu₃O_6.6 is mapped out. This work reviews and highlights the potential of silicon vacancy-based quantum sensors for in situ magnetic detection at high pressures. Its applications in pressure sensing, pressure-induced magnetic phase transformation and pressure-induced superconducting transformation are also presented.
- color centres in SiC,
- high pressure,
- magnetic measurement,
- optical detected magnetic resonance,
- pressure-induced superconducting transformation

FullText(HTML)

References(28)

References

[1]	DALLADAY-SIMPSON P, HOWIE R T, GREGORYANZ E. Evidence for a new phase of dense hydrogen above 325 gigapascals [J]. Nature, 2016, 529(7584): 63–67. doi: 10.1038/nature16164
[2]	LIU X D, HOWIE R T, ZHANG H C, et al. High-pressure behavior of hydrogen and deuterium at low temperatures [J]. Physical Review Letters, 2017, 119(6): 065301. doi: 10.1103/PhysRevLett.119.065301
[3]	DROZDOV A P, KONG P P, MINKOV V S, et al. Superconductivity at 250 K in lanthanum hydride under high pressures [J]. Nature, 2019, 569(7757): 528–531. doi: 10.1038/s41586-019-1201-8
[4]	DROZDOV A P, EREMETS M I, TROYAN I A, et al. Conventional superconductivity at 203 kelvin at high pressures in the sulfur hydride system [J]. Nature, 2015, 525(7567): 73–76. doi: 10.1038/nature14964
[5]	MAO H K, CHEN B, GOU H Y, et al. 2020: transformative science in the pressure dimension [J]. Matter and Radiation at Extremes, 2021, 6(1): 013001. doi: 10.1063/5.0040607
[6]	LUO H, BU K J, YIN Y F, et al. Anomalous charge transfer from organic ligands to metal halides in zero-dimensional [(C₆H₅)₄P]₂SbCl₅ enabled by pressure-induced lone pair-π interaction [J]. Angewandte Chemie International Edition, 2023, 62(37): e202304494. doi: 10.1002/anie.202304494
[7]	LV X J, STOUMPOS C, HU Q Y, et al. Regulating off-centering distortion maximizes photoluminescence in halide perovskites [J]. National Science Review, 2021, 8(9): nwaa288. doi: 10.1093/nsr/nwaa288
[8]	BHATTACHARYYA P, CHEN W H, HUANG X L, et al. Imaging the Meissner effect and flux trapping in a hydride superconductor at megabar pressures using a nanoscale quantum sensor [EB/OL]. arXiv: 2306.03122. (2023-06-05) [2023-10-10]. https://arxiv.org/abs/2306.03122.
[9]	HUANG X L, WANG X, DUAN D F, et al. High-temperature superconductivity in sulfur hydride evidenced by alternating-current magnetic susceptibility [J]. National Science Review, 2019, 6(4): 713–718. doi: 10.1093/nsr/nwz061
[10]	HSIEH S, BHATTACHARYYA P, ZU C, et al. Imaging stress and magnetism at high pressures using a nanoscale quantum sensor [J]. Science, 2019, 366(6471): 1349–1354. doi: 10.1126/science.aaw4352
[11]	YIP K Y, HO K O, YU K Y, et al. Measuring magnetic field texture in correlated electron systems under extreme conditions [J]. Science, 2019, 366(6471): 1355–1359. doi: 10.1126/science.aaw4278
[12]	LESIK M, PLISSON T, TORAILLE L, et al. Magnetic measurements on micrometer-sized samples under high pressure using designed NV centers [J]. Science, 2019, 366(6471): 1359–1362. doi: 10.1126/science.aaw4329
[13]	SHANG Y X, HONG F, DAI J H, et al. Magnetic sensing inside a diamond anvil cell via nitrogen-vacancy center spins [J]. Chinese Physics Letters, 2019, 36(8): 086201. doi: 10.1088/0256-307X/36/8/086201
[14]	彭世杰, 刘颖, 马文超, 等. 基于金刚石氮-空位色心的精密磁测量 [J]. 物理学报, 2018, 67(16): 167601. doi: 10.7498/aps.67.20181084 PENG S J, LIU Y, MA W C, et al. High-resolution magnetometry based on nitrogen-vacancy centers in diamond [J]. Acta Physica Sinica, 2018, 67(16): 167601. doi: 10.7498/aps.67.20181084
[15]	ACOSTA V M, BAUCH E, LEDBETTER M P, et al. Temperature dependence of the nitrogen-vacancy magnetic resonance in diamond [J]. Physical Review Letters, 2010, 104(7): 070801. doi: 10.1103/PhysRevLett.104.070801
[16]	CHRISTLE D J, KLIMOV P V, DE LAS CASAS C F, et al. Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface [J]. Physical Review X, 2017, 7(2): 021046.
[17]	CHRISTLE D J, FALK A L, ANDRICH P, et al. Isolated electron spins in silicon carbide with millisecond coherence times [J]. Nature Materials, 2015, 14(2): 160–163.
[18]	WIDMANN M, LEE S Y, RENDLER T, et al. Coherent control of single spins in silicon carbide at room temperature [J]. Nature Materials, 2015, 14(2): 164–168. doi: 10.1038/nmat4145
[19]	KOEHL W F, BUCKLEY B B, HEREMANS F J, et al. Room temperature coherent control of defect spin qubits in silicon carbide [J]. Nature, 2011, 479(7371): 84–87. doi: 10.1038/nature10562
[20]	ZARGALEH S A, VON BARDELEBEN H J, CANTIN J L, et al. Electron paramagnetic resonance tagged high-resolution excitation spectroscopy of NV-centers in 4H-SiC [J]. Physical Review B, 2018, 98(21): 214113. doi: 10.1103/PhysRevB.98.214113
[21]	WOLFOWICZ G, ANDERSON C P, DILER B, et al. Vanadium spin qubits as telecom quantum emitters in silicon carbide [J]. Science Advances, 2020, 6(18): eaaz1192.
[22]	GRUBER A, DRÄBENSTEDT A, TIETZ C, et al. Scanning confocal optical microscopy and magnetic resonance on single defect centers [J]. Science, 1997, 276(5321): 2012–2014. doi: 10.1126/science.276.5321.2012
[23]	DOHERTY M W, STRUZHKIN V V, SIMPSON D A, et al. Electronic properties and metrology applications of the diamond NV- center under pressure [J]. Physical Review Letters, 2014, 112(4): 047601. doi: 10.1103/PhysRevLett.112.047601
[24]	WANG J F, LIU L, LIU X D, et al. Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbide [J]. Nature Materials, 2023, 22(4): 489–494. doi: 10.1038/s41563-023-01477-5
[25]	ANISIMOV A N, SIMIN D, SOLTAMOV V A, et al. Optical thermometry based on level anticrossing in silicon carbide [J]. Scientific Reports, 2016, 6(1): 33301. doi: 10.1038/srep33301
[26]	FALK A L, BUCKLEY B B, CALUSINE G, et al. Polytype control of spin qubits in silicon carbide [J]. Nature Communications, 2013, 4(1): 1819. doi: 10.1038/ncomms2854
[27]	LIU L, WANG J F, LIU X D, et al. Coherent control and magnetic detection of divacancy spins in silicon carbide at high pressures [J]. Nano Letters, 2022, 22(24): 9943–9950. doi: 10.1021/acs.nanolett.2c03378
[28]	NAGY R, NIETHAMMER M, WIDMANN M, et al. High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide [J]. Nature Communications, 2019, 10(1): 1954. doi: 10.1038/s41467-019-09873-9

Relative Articles

Supplements(0)

Cited By

Proportional views

Proportional views

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Figures(9)

Get Citation

PDF

XML

Article Metrics

Article views(266) PDF downloads(59)

Quantum Magnetic Measurement under High Pressure Based on Color Centres in Silicon Carbide

doi: 10.11858/gywlxb.20230750

Abstract

References

Proportional views

Catalog

通讯作者: 陈斌, bchen63@163.com

Article Metrics

Proportional views

Related

Quantum Magnetic Measurement under High Pressure Based on Color Centres in Silicon Carbide

doi: 10.11858/gywlxb.20230750

Abstract

References

Proportional views

Catalog

通讯作者: 陈斌, bchen63@163.com

Article Metrics

Proportional views

Related

Export File

Citation

Format

Content