Quantum Magnetic Measurement under High Pressure Based on Color Centres in Silicon Carbide

LIU Lin; WANG Junfeng; LIU Xiaodi

doi:10.11858/gywlxb.20230750

Volume 37 Issue 6

Dec 2023

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Chinese Journal of High Pressure Physics > 2023 > 37(6): 060102.

LIU Lin, WANG Junfeng, LIU Xiaodi. Quantum Magnetic Measurement under High Pressure Based on Color Centres in Silicon Carbide[J]. Chinese Journal of High Pressure Physics, 2023, 37(6): 060102. doi: 10.11858/gywlxb.20230750

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LIU Lin, WANG Junfeng, LIU Xiaodi. Quantum Magnetic Measurement under High Pressure Based on Color Centres in Silicon Carbide[J]. Chinese Journal of High Pressure Physics, 2023, 37(6): 060102. doi: 10.11858/gywlxb.20230750

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Quantum Magnetic Measurement under High Pressure Based on Color Centres in Silicon Carbide

doi: 10.11858/gywlxb.20230750

LIU Lin^1
,,
WANG Junfeng²,
LIU Xiaodi^{1,*
,
,}

1.
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, Anhui, China
2.
College of Physics, Sichuan University, Chengdu 610065, Sichuan, China

Received Date: 10 Oct 2023
Rev Recd Date: 22 Nov 2023

Available Online: 12 Dec 2023

Issue Publish Date: 15 Dec 2023

Abstract

Abstract

The quantum precision magnetic measurement in high-pressure environments is of great significance for studying the evolution and structure of matter under an extreme environment. Given the challenges associated with achieving in-situ high-resolution magnetic detection under high pressure by using traditional methods, the proposed high-pressure quantum magnetic measurement based on solid-state color centres has made significant progress in recent years. This advancement is of great significance in advancing the study of matter under high pressure. And this paper primarily focuses on the research of quantum magnetic measurement using SiC color centres under high pressure. The optical and spin properties of silicon vacancy defects and divacancy defects in SiC under high pressure is reviewed. Furthermore, the magnetic phase transition of Nd₂Fe₁₄B is observed, and the critical temperature-pressure phase diagram of the superconductor YBa₂Cu₃O_6.6 is mapped out. This work reviews and highlights the potential of silicon vacancy-based quantum sensors for in situ magnetic detection at high pressures. Its applications in pressure sensing, pressure-induced magnetic phase transformation and pressure-induced superconducting transformation are also presented.
- color centres in SiC,
- high pressure,
- magnetic measurement,
- optical detected magnetic resonance,
- pressure-induced superconducting transformation

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References

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Quantum Magnetic Measurement under High Pressure Based on Color Centres in Silicon Carbide

doi: 10.11858/gywlxb.20230750

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Quantum Magnetic Measurement under High Pressure Based on Color Centres in Silicon Carbide

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