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Volume 36 Issue 6
Dec 2022
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Chinese Journal of High Pressure Physics  > 2022  >  36(6): 061101.
HAN Pengju, HU Meihua, BI Ning, WANG Yueyue, ZHOU Xubiao, LI Shangsheng. Enhanced Thermoelectric Performance of P-Doped Silicon-Germanium Alloys Synthesized by High-Pressure Method[J]. Chinese Journal of High Pressure Physics, 2022, 36(6): 061101. doi: 10.11858/gywlxb.20220601
Citation: HAN Pengju, HU Meihua, BI Ning, WANG Yueyue, ZHOU Xubiao, LI Shangsheng. Enhanced Thermoelectric Performance of P-Doped Silicon-Germanium Alloys Synthesized by High-Pressure Method[J]. Chinese Journal of High Pressure Physics, 2022, 36(6): 061101. doi: 10.11858/gywlxb.20220601
shu

Enhanced Thermoelectric Performance of P-Doped Silicon-Germanium Alloys Synthesized by High-Pressure Method

doi: 10.11858/gywlxb.20220601
  • 1.

    School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454003, Henan, China

  • 2.

    School of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo 454003, Henan, China

  • Received Date: 31 May 2022
  • Rev Recd Date: 28 Jun 2022
    • Available Online: 21 Nov 2022
  • Issue Publish Date: 05 Dec 2022
    Abstract
  • Thermoelectric material is a kind of functional material which could realize the conversion between thermal energy and electric energy. Silicon-germanium (SiGe) alloy is used in deep space exploration as a kind of high temperature thermoelectric material. In this work, P-doped n-type SiGe alloy was prepared by high pressure synthesis method. The electrical and thermal transport properties of Si80Ge20Px (x=0, 1, 2) were characterized. The results show that the samples synthesized under high pressure have multi-scale defects. P-doping could optimize the electrical conductivity and Seebeck coefficient of SiGe alloy, the power factor of Si80Ge20P1 sample is 100% higher than that of the undoped sample at 1050 K. Furthermore, the increase of P content leads to the decrease of lattice thermal conductivity, and the thermal conductivity of Si80Ge20P2 sample decreases by about 80% at 1050 K. The thermoelectric properties of SiGe alloy are significantly improved, and the maximum figure of merit of Si80Ge20P2 sample reached 1.1 at 1050 K.

     

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