延期状态下电子雷管电子控制模块的高过载加载实验

叶紫阳; 吴红波; 杨仕春; 黄菓树; 李天浩; 孙翼; 马成帅; 任梦雨

doi:10.11858/gywlxb.20240840

延期状态下电子雷管电子控制模块的高过载加载实验

doi: 10.11858/gywlxb.20240840

1.
安徽理工大学化工与爆破学院, 安徽淮南　232001
2.
安徽江南化工股份有限公司, 安徽合肥　230031
3.
无锡盛景微电子股份有限公司, 江苏无锡　214000
4.
安徽中金立华矿业工程有限公司, 安徽安庆 246003

基金项目: 安徽高校自然科学研究重点项目（KJ2019A0121）

详细信息

作者简介:
叶紫阳（1997－），男，硕士研究生，主要从事电子雷管研究. E-mail：2210779323@qq.com

通讯作者:
吴红波（1975－），男，博士，教授，主要从事爆破器材与安全研究. E-mail：hbwu@aust.edu.cn

中图分类号: O521.9; O347; TQ565.2
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出版历程
- 收稿日期: 2024-07-02
- 修回日期: 2024-07-26
- 录用日期: 2024-08-20
- 网络出版日期: 2024-10-15

Experimental Study on High Overload Loading of Electronic Control Module inside Electronic Detonator under Delayed State

1.
School of Chemical and Blasting Engineering, Anhui University of Science and Technology, Huainan 232001, Anhui, China
2.
Anhui Jiangnan Chemical Industry Co., Ltd., Hefei 230031, Anhui, China
3.
Wuxi Holyview Microelectronics Co., Ltd., Wuxi 214000, Jiangsu, China
4.
Anhui Zhongjin Lihua Mining Engineering Co., Ltd., Anqing 246003, Anhui, China

摘要

摘要: 为探究电子雷管内的电子控制模块在延期状态下受冲击载荷时的失效机制，采用分离式霍普金森压杆（split Hopkinson pressure bar，SHPB）对电子雷管试件进行了高过载加载测试，得到了整体电子控制模块和分离出钽电容的其余电子控制模块受不同加载压力时的失效情况。结果显示：钽电容在1.495×10⁵g过载时出现电压下降现象，且过载越大，短路失效情况越明显；在一定过载范围内，钽电容因其特有的自愈性，可在短时间内回到起始量级；当过载超过临界范围，达到3.848×10⁵g时，钽电容损坏且无法逆转。模块内其余组件的抗过载能力强于电容，芯片在4.155×10⁵g过载后检测异常，电阻元件失效发生在4.249×10⁵g以上过载。
- 电子雷管 /
- 电子控制模块 /
- 分离式霍普金森压杆 /
- 高过载 /
- 失效
Abstract: In order to explore the failure mechanism of the electronic control module inside the electronic detonator under impact load during the postponement state, a split Hopkinson pressure bar (SHPB) experiment was conducted on the electronic detonator specimens under high overload loading. The failure conditions of the overall electronic control module and the remaining electronic control modules separated from the tantalum capacitors were obtained under different levels of loading experiments. The results indicate that the tantalum capacitor exhibited a voltage drop phenomenon at an overload of 1.495×10⁵g, with a more pronounced short-circuit failure as the overload increased. Within a certain overload range, the tantalum capacitor᾽s unique self-healing properties allow it to return to its initial level rapidly. However, when the overload exceeded the critical threshold of 3.848×10⁵g, the tantalum capacitor was irreversibly damaged. The overload resistance of other components within the module is stronger than that of the capacitor. The chip detected an anomaly after an overload of 4.155×10⁵g, while the failure of the resistor components occurs at an overload of over 4.249×10⁵g.
- electronic detonators /
- electronic control module /
- split Hopkinson pressure bar /
- high overload /
- failure

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图 1 高过载测试系统

Figure 1. Test equipment for high overload

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图 2 单电容电路工作原理示意图

Figure 2. Schematic diagram of a single-capacitor circuit working principle

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图 3 2种实验模型

Figure 3. Two experimental models

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图 4 2种试件在未受高过载时的电容电压变化

Figure 4. Capacitance voltage variation of the two specimens under normal operating conditions of high load

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图 5 不同气压撞击后的电子引火元件

Figure 5. Electronic ignition elements corresponding to barometric impacts

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图 6 0.2 MPa气压下的入射杆电压信号及对应的过载加速度

Figure 6. Incident bar pulse signal and corresponding overload acceleration under 0.2 MPa

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图 7 A型试件延期过程中过载加速度与电容电压的关系

Figure 7. Relationship between overload acceleration and capacitance voltage during the postponement process of specimen type A

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图 8 B型试件受高过载时的电容电压变化

Figure 8. Capacitance voltage variation of specimen type B under high overload condition

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表 1 电子引火元件各组件类型及参数

Table 1. Types and parameters of electronic igniter components

Capacitor type	Capacitance/µF	Model	Bridge wire material	Resistance/Ω	Chip
Tantalum	22	22K20	Nickel chromium alloy	2	Fourth generation

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表 2 B型试件在高过载加载下各组件的失效情况

Table 2. Failure conditions of components of specimen type B under high overload

Pressure/ MPa	Maximum overload/(10⁵g)	Voltage change corresponding type chart	Sample module failure case
Pressure/ MPa	Maximum overload/(10⁵g)	Voltage change corresponding type chart	Bridge wire	Chip	Circuit board
0.7	3.447	Type Ⅰ	Melted	Normal	Normal
	3.506	Type Ⅰ	Melted	Normal	Normal
	3.328	Type Ⅰ	Melted	Normal	Normal
0.8	3.684	Type Ⅰ	Melted	Normal	Normal
	3.731	Type Ⅰ	Melted	Normal	Normal
	3.776	Type Ⅰ	Melted	Normal	Normal
0.9	3.817	Type Ⅱ	Unmelted, non-ablation trace	Normal	Resistor failure
	3.984	Type Ⅰ	Melted	Normal	Normal
	3.759	Type Ⅰ	Melted	Normal	Normal
1.0	4.155	Type Ⅰ	Unmelted, ablation, deformation, discoloration	Abnormal	Normal
	4.086	Type Ⅰ	Melted	Normal	Normal
	4.167	Type Ⅱ	Unmelted, non-ablation trace	Abnormal	Normal
1.1	4.235	Type Ⅱ	Unmelted, non-ablation trace	Abnormal	Normal
	4.173	Type Ⅰ	Unmelted, ablation, discoloration	Abnormal	Normal
	4.249	Type Ⅱ	Unmelted, non-ablation trace	Normal	Resistor failure
1.2	4.472	Type Ⅱ	Unmelted, non-ablation trace	Abnormal	Normal
	4.581	Type Ⅱ	Unmelted, non-ablation trace	Abnormal	Resistor failure
	4.426	Type Ⅱ	Physical bending	Abnormal	Resistor failure

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