Strain Rate-Dependent Phase Transition Behavior in Silicon
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摘要: 高压相变是凝聚态物理、地球与行星科学、材料科学等领域关注的核心问题之一，而加载应变率是相变动力学过程的重要影响因素。由于动态加载下物质相结构原位诊断技术的不足以及宽广加载应变率下物质高压相变系统实验研究的缺失，难以开展基于原子尺度物理机制的相变动力学过程建模和数值模拟研究。由于硅的高压相极其丰富，且拥有大量亚稳相，动力学因素在其高压相变过程中发挥着至关重要的作用，因此，硅是研究高压相变动力学的理想材料，对普适相变动力学过程的理论建模具有重要意义。以硅为例，介绍其在准静态、中等应变率和高应变率加载下的相变行为，探讨加载应变率对其高压相变行为的影响。Abstract: High pressure phase transition is one of the core concerns in the field of condensed matter physics, Earth and planetary science and material science. And the loading strain rate is an important influencing factor for the kinetics of phase transition. Due to the lack of in situ diagnostics of crystal structure under dynamic loading, and the limited experimental research on the phase transition behavior over a wide range of strain rates, there is no unified physical model to describe how the phase transition dynamics evolve from static compression to high strain rate shock compression. Since the high-pressure phase diagram of silicon is extremely rich and possesses a large number of substable phases, and at the same time, the kinetic factors play a crucial role in the high-pressure phase transition process of silicon, silicon is an ideal material for studying the high-pressure phase transition kinetics, which is of great significance for the theoretical modeling of universal phase-transition kinetic processes. Here, we take silicon as an example and present its phase transition behavior under quasi-static, medium strain rate and high strain rate loading in turn, highlighting the effect of loading strain rate on its high-pressure phase transition behavior.
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图 5 单晶硅在不同加压速率下的时间分辨拉曼光谱
Figure 5. Time-resolved Raman spectra for single crystal silicon at different compression rates
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[1] BRIDGMAN P W. The physics of high pressure [M]. New York: MacMillan, 1931. [2] BRIDGMAN P W. The nature of thermodynamics [M]. Cambridge: Harvard University Press, 1941. [3] AMADOU N, DE RESSEGUIER T, BRAMBRINK E, et al. Kinetics of the iron α-ε phase transition at high-strain rates: experiment and model [J]. Physical Review B, 2016, 93(21): 214108. doi: 10.1103/PhysRevB.93.214108 [4] GORMAN M G, COLEMAN A L, BRIGGS R, et al. Femtosecond diffraction studies of solid and liquid phase changes in shock-compressed bismuth [J]. Scientific Reports, 2018, 8(1): 16927. doi: 10.1038/s41598-018-35260-3 [5] SMITH R F, EGGERT J H, SWIFT D C, et al. Time-dependence of the alpha to epsilon phase transformation in iron [J]. Journal of Applied Physics, 2013, 114(22): 223507. doi: 10.1063/1.4839655 [6] YUAN C S, ZHANG X, ZHOU L J, et al. Phase transitions of carbon tetrachloride under static and dynamic pressures [J]. Journal of Molecular Liquids, 2021, 328: 115444. doi: 10.1016/j.molliq.2021.115444 [7] LIN C L, LIU X Q, YANG D L, et al. Temperature- and rate-dependent pathways in formation of metastable silicon phases under rapid decompression [J]. Physical Review Letters, 2020, 125(15): 155702. doi: 10.1103/PhysRevLett.125.155702 [8] LIN C L, LIU X Q, YONG X, et al. Temperature-dependent kinetic pathways featuring distinctive thermal-activation mechanisms in structural evolution of ice Ⅶ [J]. Proceedings of the National Academy of Sciences of the United States of America, 2020, 117(27): 15437–15442. doi: 10.1073/pnas.2007959117 [9] YANG D L, LIU J, LIN C L, et al. Phase transitions in bismuth under rapid compression [J]. Chinese Physics B, 2019, 28(3): 036201. doi: 10.1088/1674-1056/28/3/036201 [10] HUSBAND R J, O’BANNON E F, LIERMANN H P, et al. Compression-rate dependence of pressure-induced phase transitions in Bi [J]. Scientific Reports, 2021, 11(1): 14859. doi: 10.1038/s41598-021-94260-y [11] LIN C L, YONG X, TSE J S, et al. Kinetically controlled two-step amorphization and amorphous-amorphous transition in ice [J]. Physical Review Letters, 2017, 119(13): 135701. doi: 10.1103/PhysRevLett.119.135701 [12] LIN C L, SMITH J S, SINOGEIKIN S V, et al. A metastable liquid melted from a crystalline solid under decompression [J]. Nature Communications, 2017, 8: 14260. doi: 10.1038/ncomms14260 [13] LI C, WANG C P, HAN J J, et al. A comprehensive study of the high-pressure-temperature phase diagram of silicon [J]. Journal of Materials Science, 2018, 53(10): 7475–7485. doi: 10.1007/s10853-018-2087-9 [14] TURNEAURE S J, SINCLAIR N, GUPTA Y M. Real-time examination of atomistic mechanisms during shock-induced structural transformation in silicon [J]. Physical Review Letters, 2016, 117(4): 045502. doi: 10.1103/PhysRevLett.117.045502 [15] PANDOLFI S, BROWN S B, STUBLEY P G, et al. Atomistic deformation mechanism of silicon under laser-driven shock compression [J]. Nature Communications, 2022, 13: 5535. doi: 10.1038/s41467-022-33220-0 [16] MCBRIDE E E, KRYGIER A, EHNES A, et al. Phase transition lowering in dynamically compressed silicon [J]. Nature Physics, 2019, 15: 89–94. doi: 10.1038/s41567-018-0290-x [17] EVANS W J, YOO C S, LEE G W, et al. Dynamic diamond anvil cell (dDAC): a novel device for studying the dynamic-pressure properties of materials [J]. Review of Scientific Instruments, 2007, 78(7): 073904. doi: 10.1063/1.2751409 [18] SMITH J S, SINOGEIKIN S V, LIN C L, et al. Developments in time-resolved high pressure X-ray diffraction using rapid compression and decompression [J]. Review of Scientific Instruments, 2015, 86(7): 072208. doi: 10.1063/1.4926887 [19] JENEI Z, LIERMANN H P, HUSBAND R, et al. New dynamic diamond anvil cells for tera-pascal per second fast compression X-ray diffraction experiments [J]. Review of Scientific Instruments, 2019, 90(6): 065114. doi: 10.1063/1.5098993 [20] 苏磊, 杨国强. 动态压力加载/卸载装置dDAC及原位表征技术研究进展 [J]. 高压物理学报, 2021, 35(6): 060102. doi: 10.11858/gywlxb.20210505SU L, YANG G Q. Research progress of dynamic pressure loading/unloading device and in-situ characterization technology [J]. Chinese Journal of High Pressure Physics, 2021, 35(6): 060102. doi: 10.11858/gywlxb.20210505 [21] CHEN X H, ZHANG Y, YE S J, et al. Time-resolved Raman spectroscopy for monitoring the structural evolution of materials during rapid compression [J]. Review of Scientific Instruments, 2023, 94(12): 123901. doi: 10.1063/5.0172530 [22] FENG L X, ZHANG X Q, LI W H, et al. Multiple structural phase transitions in single crystal silicon subjected to dynamic loading [J]. Scripta Materialia, 2024, 241: 115890. doi: 10.1016/j.scriptamat.2023.115890 -
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