贴片晶振在冲击环境下的损伤边界

罗凯文; LI  Q. M.

doi:10.11858/gywlxb.20200572

贴片晶振在冲击环境下的损伤边界

doi: 10.11858/gywlxb.20200572

罗凯文^1,,
LI Q. M.^2,*, ,

1.
北京理工大学机电学院，北京　100081
2.
曼彻斯特大学工程学院，英国曼彻斯特　M13 9PL

详细信息

作者简介:
罗凯文（1994－），男，硕士研究生，主要从事冲击环境研究. E-mail：luokw67@gmail.com

通讯作者:
Li Q.M.（1962－），男，博士，教授，博士生导师，主要从事冲击动力学研究. E-mail：Qingming.li@manchester.ac.uk

中图分类号: O347; TB123
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出版历程
- 收稿日期: 2020-06-19
- 修回日期: 2020-07-07
- 发布日期: 2020-10-25

Damage Boundary of Crystal Oscillator under Shock Environment

LUO Kaiwen^1
,,
LI Q. M.^{2,*
, ,}

1.
School of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, China
2.
School of Engineering, The University of Manchester, Manchester M13 9PL, UK

摘要

摘要: 贴片式石英晶体振荡器广泛应用于各类电子和通信设备系统中。针对晶振在冲击环境中容易出现结构破坏而导致系统工作异常的问题，通过分析单自由度系统在不同频率冲击载荷作用下的响应特点，建立了结构的应力响应水平与相关冲击响应谱谱值之间的联系，获得了较已有结论更合理的损伤边界形式。根据典型晶振结构易损组件的力学特性建立对应的简化分析模型，得到了贴片晶振在大频率范围内的结构损伤边界。利用有限元仿真软件，对晶振结构在0.5～30 kHz频率范围内冲击载荷下的响应进行仿真分析，验证了该损伤边界的有效性。这也为以贴片晶振为代表的微小元器件在冲击环境下的可靠性研究提供了一种可行的方法。
- 表面组装器件 /
- 晶体振荡器 /
- 冲击环境 /
- 冲击响应谱 /
- 损伤边界 /
- 有限元
Abstract: The surface mounted devices (SMD) crystal oscillator is widely used in various electrical and communication equipment or systems. The crystal oscillator is prone to structural damage under shock environment, which may results in abnormal operation of the system. The relationship between the level of structural stress response and the value of related shock response spectrum (SRS) is established and a more reasonable damage boundary form is obtained by analyzing the response characteristics of the single-degree-of-freedom (SDOF) system under shock loads with different frequencies. Based on the mechanical characteristics of the vulnerable component of a typical crystal oscillator, the corresponding simplified analytical model is established, and its structural damage boundary in a large frequency range is obtained. The finite element simulation software is used to simulate the response of crystal oscillator structure under shock loads within the frequency range of 0.5–30 kHz to verify the effectiveness of the structural damage boundary. This paper also provides a feasible method for the reliability study of various micro-components represented by SMD crystal oscillator under shock environment.
- surfacemounteddevice /
- crystal oscillator /
- shock environment /
- shock response spectrum /
- damage boundary /
- finite element

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图 1 贴片晶振的结构

Figure 1. Structure of surface mounted device (SMD) crystal oscillator

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图 2 晶振在冲击下的断裂部位^[4]

Figure 2. Fracture position of crystal under impact loading^[4]

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图 3 单自由度质量弹簧系统

Figure 3. Single-degree-of-freedom system with mass, stiffness system

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图 4 相对时间尺度与结构冲击响应的分析方法^[18]

Figure 4. Relative time scale and the analysis method of structural impact response^[18]

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图 5 晶振结构的有限元模型

Figure 5. Finite element model of SMD crystal oscillator

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图 6 晶片组件第1、3、5阶模态距固支边相同距离的点的平均横向位移相对幅值

Figure 6. Average relative deflection of the points at the same distance from the fixed edge of the 1st, 3rd, and 5th order modes of the structure

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图 7 悬臂梁结构受均布载荷作用

Figure 7. Cantilever beam structure under uniform load

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图 8 在晶振焊盘处施加加速度载荷

Figure 8. Applying acceleration load to the welding pads

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图 9 正弦衰减信号

Figure 9. Attenuated sinusoidal signal

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图 10 损伤边界与临界正弦衰减信号的冲击谱

Figure 10. Damage boundary and SRS of critical attenuated sinusoidal signal

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图 11 晶振受横向冲击时的应力云图

Figure 11. Stress contour of crystal oscillator under lateral shock

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图 12 实测冲击信号

Figure 12. Measured shock signal

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图 13 损伤边界临界冲击信号的冲击谱

Figure 13. Damage boundary and shock response spectrum of critical shock signal

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表 1 模型尺寸

Table 1. Geometrical dimensions of the model

Structure module	Length/mm	Width/mm	Height/mm	Structure module	Length/mm	Width/mm	Height/mm
Crystal plate	5.0	3.2	0.08	Pad	1.4	1.1	0.05
Conductive adhesive	0.4	0.4	0.20	Lid	6.0	4.0	0.10
Electrode	2.0	1.5	0.02	Circuit block 1	4.0	2.2	0.30
Packaging base	7.0	5.0	1.80	Circuit block 2	0.3	1.2	0.50

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表 2 有限元模型中的材料参数

Table 2. Material parameters in finite element model

Module	Material	Elastic modulus/GPa	Density/(g·cm⁻³)	Poisson’s ratio	Tensile strength/MPa
Crystal plate	Quartz	[C_pq]^[21]	2.65		40
Integrated circuit	Silicon	13.0	2.33	0.28
Electrode	Silver	73.2	10.53	0.38
Packaging base	Phenolic resin	2.0–2.9	1.25–1.30	0.35–0.38
Lid	Packfong	100.8	8.70	0.37
Conductive adhesive	Epoxy polymer	2.9	2.52	0.34
Pad	SnAgCu solder	41.6	8.74	0.40

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表 3 晶片的各阶模态频率

Table 3. Modal frequencies of the crystal plate

Modal order	Natural frequency/kHz	Effective mass in normal direction/kg	P	Modal order	Natural frequency/kHz	Effective mass in normal direction/kg	P
1	2.585	3.26288 × 10⁻⁶	1.00000	9	73.438	1.13510 × 10⁻⁸	0.00348
2	12.479	7.97027 × 10⁻⁹	0.00244	10	89.044	4.91526 × 10⁻⁸	0.01506
3	16.898	8.92118 × 10⁻⁷	0.27341	11	106.386	3.74328 × 10⁻⁹	0.00115
4	36.781	1.54332 × 10⁻⁸	0.00473	12	114.336	1.38521 × 10⁻¹⁰	0.00004
5	42.546	3.24468 × 10⁻⁷	0.09944	13	120.211	2.83863 × 10⁻⁹	0.00087
6	56.597	4.45802 × 10⁻¹¹	0.00001	14	127.139	2.82303 × 10⁻⁸	0.00865
7	61.552	5.64709 × 10⁻⁹	0.00173	15	145.952	2.23781 × 10⁻¹⁰	0.00007
8	69.982	1.17592 × 10⁻⁷	0.03604

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