位错动力学在极端环境力学中的发展及应用

崔一南; 柳占立; 胡剑桥; 刘凤仙; 庄茁

doi:10.11858/gywlxb.20200516

位错动力学在极端环境力学中的发展及应用

doi: 10.11858/gywlxb.20200516

1.
清华大学航天航空学院应用力学实验室，北京　100086
2.
中国科学院力学研究所非线性力学国家重点实验室，北京　100190

基金项目: 科学挑战专题（TZ2018001）；国家自然科学基金（11972208，11921002）

详细信息

作者简介:
崔一南（1987－），女，副教授，主要从事极端环境力学研究. Email：cyn@mail.tsinghua.edu.cn

中图分类号: O344.1
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出版历程
- 收稿日期: 2020-02-26
- 修回日期: 2020-03-31

Advances and Application of Dislocation Dynamics in the Mechanics of Extreme Environment

1.
Applied Mechanics Laboratory, Department of Engineering Mechanics, School of Aerospace, Tsinghua University, Beijing, 100086, China
2.
State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100190, China

摘要

摘要: 作为联系分子动力学和连续介质力学方法的桥梁，离散位错动力学(DDD)方法近些年来取得了诸多进展。其典型代表就是DDD与连续介质有限元方法(FEM)的耦合，使其可以考虑复杂的边界条件及多物理场的耦合作用。首先介绍了DDD方法及其与FEM耦合的典型方法，然后面向高应变率、高温、强辐照几种极端环境，系统阐述了DDD及其耦合方法的发展思路和进展，展示了该方法在揭示微观机理、发展连续化理论模型上的若干成果。
- 离散位错动力学 /
- 高应变率 /
- 高温 /
- 高压 /
- 强辐照
Abstract: Discrete dislocation dynamics (DDD) simulation method, as an ideal tool for bridging the gap in space and time scales between atomistic and continuum models, has made great progress in the past few decades. One prominent example is the coupling between DDD and finite element method (FEM), which leads to the capability of DDD to investigate the problems with complicated boundary conditions and multi-physics coupling effect. This work firstly reviewed the development of DDD method, and the coupling algorithm between DDD and FEM. Then, the advances and application of these methods in disclosing the microscopic mechanisms and developing the continuum models are reviewed under the extreme environment of high strain rate, high temperature, and irradiation.
- discrete dislocation dynamics /
- high strain rate /
- high temperature /
- high pressure /
- irradiation

HTML全文

图 1 材料变形失效行为研究在不同时空尺度下通常采用的计算方法^[6]

Figure 1. Simulation methods at different temporal and spatial scales to investigate material deformation and failure mechanisms^[6]

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图 2 位错动力学基本流程图^[17]

Figure 2. Flowchart of dislocation dynamics method^[17]

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图 3 三维位错线的不同离散方式：（a）基于晶格的描述，（b）连续化描述

Figure 3. Different discretization of three-dimensional dislocation lines: (a) lattice based description，(b) continuum description

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图 4 叠加法示意图（a）和DCM 方法变量传递示意图（b）^[33]

Figure 4. Schematic of superposition method (a) and the variable transfer process in discrete continuous method (b)^[33]

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图 5 冲击载荷下的典型位错微结构：（a）DDD-FEM 模拟结果^[51]；（b）实验中观测到的剪切带^[52]；（c）位错线缺陷与位错环结构^[53]

Figure 5. Typical dislocation microstructure under shock loading: （a） DDD-FEM simulation results^[51]（a）；（b）shear bands observed in experiments^[52]；（c）dislocation lines and loops microstructure^[53]

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图 6 （a）冲击方向应力衰减，（b）不同加载率下加载时间为75 ps 时的位错微结构演化，（c）位错密度随时间的演化，（d）应变率为10¹⁰ s⁻¹ 时不可动位错和湮灭位错^[54]

Figure 6. (a) stress attenuation in the direction of shock loading, (b) evolution of dislocation microstructure at 75 ps under different loading rates , (c) evolution of dislocation density, (d) immobile and annihilated dislocations under strain rate of 10¹⁰ s⁻¹^[54]

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图 7 单晶Mo 在不同温度、压强下的应力-应变曲线^[56]

Figure 7. Stress-strain curves of single crystal Mo under different temperatures and pressures^[56]

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图 8 亚音速位错环应力场σ₁₁的等值面（V为位错环的扩张速度，c_T为横向声速^[63]）

Figure 8. Isosurface of stress component σ₁₁ of subsonic dislocation (V is dislocation velocity, c_T is transverse wave speed^[63])

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图 9 多余半原子面发生攀移运动的示意图^[78]

Figure 9. Schematic showing the climb of edge dislocation^[78]

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图 10 离散-连续位错攀移模型中参数传递示意图^[89]

Figure 10. Schematically showing the variable transferring in discrete-continuous climb model^[89]

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图 11 位错与辐照缺陷相互作用示例：（a）在受辐照的FCC 晶体中位错被层错四边形（SFT）截获，（b）在受辐照的BCC 晶体中位错与间隙位错环反应生成位错锁（不同颜色代表不同的柏氏矢量）^{[16, 91]}

Figure 11. Interaction between dislocation and irradiation defects： (a) trappiest of dislocation by SFT in irradiated FCC crystal , (b) formation of dislocation lock due to the reaction between dislocation and interstitial loop in irradiated BCC crystal (Different colors represent different burgers vector)^{[16, 91]}

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图 12 位错动力学与辐照缺陷场耦合计算高剂量辐照材料中的位错通道形成^[97]

Figure 12. Formation of dislocation channel in high-dose irradiated material calculated by DDD coupled with irradiation defect fields^[97]

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