固相反应法制备钴掺杂氧化镁传压介质

吴京军 贺端威 王强 张佳威 刘进

吴京军, 贺端威, 王强, 张佳威, 刘进. 固相反应法制备钴掺杂氧化镁传压介质[J]. 高压物理学报, 2018, 32(5): 053301. doi: 10.11858/gywlxb.20180564
引用本文: 吴京军, 贺端威, 王强, 张佳威, 刘进. 固相反应法制备钴掺杂氧化镁传压介质[J]. 高压物理学报, 2018, 32(5): 053301. doi: 10.11858/gywlxb.20180564
WU Jingjun, HE Duanwei, WANG Qiang, ZHANG Jiawei, LIU Jin. Preparation of Cobalt-Doped Magnesium Oxide Pressure-Transmitting Medium with Solid Reaction Process[J]. Chinese Journal of High Pressure Physics, 2018, 32(5): 053301. doi: 10.11858/gywlxb.20180564
Citation: WU Jingjun, HE Duanwei, WANG Qiang, ZHANG Jiawei, LIU Jin. Preparation of Cobalt-Doped Magnesium Oxide Pressure-Transmitting Medium with Solid Reaction Process[J]. Chinese Journal of High Pressure Physics, 2018, 32(5): 053301. doi: 10.11858/gywlxb.20180564

固相反应法制备钴掺杂氧化镁传压介质

doi: 10.11858/gywlxb.20180564
基金项目: 

国家自然科学基金 51472171

国家自然科学基金重大仪器研制项目 11427810

四川省科技支撑计划 15ZC0946

中国工程物理研究院中子物理学重点实验室课题 2014AB02

详细信息
    作者简介:

    吴京军(1991-), 男, 硕士, 主要从事大腔体静高压装置相关材料和超硬材料的合成及高压物性研究.E-mail:scujingjunwu@163.com

    通讯作者:

    贺端威(1969-), 男, 博士, 教授, 主要从事大腔体静高压技术、超硬材料及高压下弹塑性行为研究.E-mail:duanweihe@scu.edu.cn

  • 中图分类号: O521.2;O521.3

Preparation of Cobalt-Doped Magnesium Oxide Pressure-Transmitting Medium with Solid Reaction Process

  • 摘要: 以氧化镁(MgO)和氧化钴(CoO)为初始材料,利用固相反应方法,经8 h的混料、200 MPa的预压以及在空气氛围下1 200℃的烧结等步骤,成功制备出钴的摩尔分数为9%的氧化镁传压介质(MgO+9% CoO)。采用X射线粉末衍射仪、扫描电子显微镜以及热重分析仪对样品进行表征,结果表明:在烧结过程中混合粉料之间发生了反应,金属离子相互交换,钴离子取代MgO晶格中的部分镁离子,从而形成MgO-CoO固溶体。与目前国产MgO传压介质(MgO+10% Na4SiO4(质量分数))相比,实验制备的钴掺杂MgO传压介质不含杂质,高温高压下更稳定,并且温度发生效率更高。

     

  • 图  样品组装示意

    Figure  1.  Schematic of sample assembly

    图  混合粉料经不同温度处理后(a)以及MgO+9%CoO和MgO+10%Na4SiO4在12 GPa/2 000 ℃、12 GPa/1 800 ℃条件下处理前后(b)的XRD谱(图 2(b)中的温度为腔体中心温度)

    Figure  2.  XRD patterns of powder mixture treated at different temperatures (a) and MgO+9%CoO and MgO+10%Na4SiO4 before and after being treated at 12 GPa/2 000 ℃ and 12 GPa/1 800 ℃ (b) (The temperature in Fig. 2(b) represents the central temperature of the cell)

    图  MgO+9%CoO和MgO+10%Na4SiO4的SEM图像(图 3(b)中白色方形区域内的物质为Na4SiO4,2 000和1 800 ℃均代表腔体中心温度)

    Figure  3.  SEM images of MgO+9%CoO and MgO+10%Na4SiO4 (Na4SiO4 is marked by the white box in Fig. 2(b), and 2 000 and 1 800 ℃ represent the central temperature of the cell)

    图  热重分析结果

    Figure  4.  Thermogravimetric analysis results

    图  腔体压力为12 GPa下的温度发生效率测试结果

    Figure  5.  Efficiency of temperature generation measured at cell pressure of 12 GPa

    表  1  块体样品的压制及烧结情况

    Table  1.   Experimental details of pressing and sintering of bulk samples

    No.Load/
    MPa
    Dimension/
    (mm×mm×mm)
    CrackingDensity/
    (g·cm-3)
    110039×39×25No2.3
    216039×39×23No2.3
    316039×39×23No2.3
    416039×39×23No2.3
    516039×39×23No2.3
    624039×39×24No2.4
    724039×39×23No2.4
    824039×39×23No2.4
    924039×39×23No2.4
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  • 收稿日期:  2018-05-16
  • 修回日期:  2018-05-24

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