尼龙6在高压退火中的晶体生长

徐伟杰 曹大呼 俞强

徐伟杰, 曹大呼, 俞强. 尼龙6在高压退火中的晶体生长[J]. 高压物理学报, 2012, 26(6): 709-714. doi: 10.11858/gywlxb.2012.06.017
引用本文: 徐伟杰, 曹大呼, 俞强. 尼龙6在高压退火中的晶体生长[J]. 高压物理学报, 2012, 26(6): 709-714. doi: 10.11858/gywlxb.2012.06.017
XU Wei-Jie, CAO Da-Hu, YU Qiang. Crystal Growth of Nylon 6 by High Pressure Annealing[J]. Chinese Journal of High Pressure Physics, 2012, 26(6): 709-714. doi: 10.11858/gywlxb.2012.06.017
Citation: XU Wei-Jie, CAO Da-Hu, YU Qiang. Crystal Growth of Nylon 6 by High Pressure Annealing[J]. Chinese Journal of High Pressure Physics, 2012, 26(6): 709-714. doi: 10.11858/gywlxb.2012.06.017

尼龙6在高压退火中的晶体生长

doi: 10.11858/gywlxb.2012.06.017
详细信息
    通讯作者:

    曹大呼 E-mail:dhcao2003@sohu.com

Crystal Growth of Nylon 6 by High Pressure Annealing

  • 摘要: 利用六面顶压机制备了高压退火的尼龙6样品,通过宽角X射线衍射(WAXD)、差示扫描量热(DSC)和红外光谱等手段,探索了高压退火对尼龙6结晶度以及晶体结构的变化。研究发现,在高压退火过程中尼龙6分子链段运动受到压力的限制,材料中晶体的形成主要依靠转氨基反应实现。

     

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出版历程
  • 收稿日期:  2011-02-17
  • 修回日期:  2011-09-13
  • 发布日期:  2012-12-15

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