高压合成AgSbTe2-Sb2Te3的热电性能研究

宿太超 张曙光 李小雷 马红安 李尚升 贾晓鹏

宿太超, 张曙光, 李小雷, 马红安, 李尚升, 贾晓鹏, . 高压合成AgSbTe2-Sb2Te3的热电性能研究[J]. 高压物理学报, 2011, 25(4): 317-320 . doi: 10.11858/gywlxb.2011.04.005
引用本文: 宿太超, 张曙光, 李小雷, 马红安, 李尚升, 贾晓鹏, . 高压合成AgSbTe2-Sb2Te3的热电性能研究[J]. 高压物理学报, 2011, 25(4): 317-320 . doi: 10.11858/gywlxb.2011.04.005
SU Tai-Chao, ZHANG Shu-Guang, LI Xiao-Lei, MA Hong-An, LI Shang-Sheng, JIA Xiao-Peng, . Thermoelectric Properties of AgSbTe2-Sb2Te3 Prepared by High Pressure Synthesis[J]. Chinese Journal of High Pressure Physics, 2011, 25(4): 317-320 . doi: 10.11858/gywlxb.2011.04.005
Citation: SU Tai-Chao, ZHANG Shu-Guang, LI Xiao-Lei, MA Hong-An, LI Shang-Sheng, JIA Xiao-Peng, . Thermoelectric Properties of AgSbTe2-Sb2Te3 Prepared by High Pressure Synthesis[J]. Chinese Journal of High Pressure Physics, 2011, 25(4): 317-320 . doi: 10.11858/gywlxb.2011.04.005

高压合成AgSbTe2-Sb2Te3的热电性能研究

doi: 10.11858/gywlxb.2011.04.005
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    通讯作者:

    贾晓鹏

Thermoelectric Properties of AgSbTe2-Sb2Te3 Prepared by High Pressure Synthesis

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    Corresponding author: JIA Xiao-Peng
  • 摘要: 利用高压方法,合成了富Sb2Te3的AgSbTe2热电材料(AgSbTe2)1-x(Sb2Te3)x (0x0.3),并对其结构和热电性质进行了研究。结果表明:(AgSbTe2)1-x(Sb2Te3)x样品为近单相的AgSbTe2材料;随着制备压力和Sb2Te3掺杂量的增加,(AgSbTe2)1-x(Sb2Te3)x的电阻率大幅降低;Seebeck系数在高压作用下变小,而少量掺杂Sb2Te3却能提高Seebeck系数;在高压和微量掺杂Sb2Te3的共同作用下,AgSbTe2的功率因子得到了提高;2.0 GPa高压下,制备的Ag0.9Sb1.1Te2.1的品质因子达到0.466,接近Bi2Te3的品质因子。

     

  • Lan Y C, Minnich A J, Chen G, et al. Enhancement of Thermoelectric Figure-of-Merit by a Bulk Nanostructuring Approach [J]. Adv Funct Mater, 2010, 20(3): 357-376.
    Morelli D T, Jovovic V, Heremans J P. Intrinsically Minimal Thermal Conductivity in Cubic Ⅰ-Ⅴ-Ⅵ2 Semiconductors [J]. Phys Rev Lett, 2008, 101(3): 035901.
    Jovovic V, Heremans J P. Measurements of the Energy Band Gap and Valence Band Structure of AgSbTe2 [J]. Phys Rev B, 2008, 77(24): 245204.
    Yoneda S, Ohno Y, Ohta E, et al. Improved Thermoelectric Properties in Structure Controlled Ag-Sb-Te System [J]. IEEJ Trans Fundam Mater, 2004, 124(4): 312-316.
    Su T C, Jia X P, Ma H A, et al. HPHT Synthesis and Electrical Properties of AgSbTe2-Ag2Te Thermoelectric Alloys [J]. Mater Lett, 2008, 62(17-18): 3269-3271.
    Liu X F, Du Z P, Li W M. Principles and Applications of Semiconductor Testing [M]. Beijing: Metallurgical Industry Press, 2007: 26. (in Chinese)
    刘新福, 杜占平, 李为民, 半导体测试技术原理与应用 [M]. 北京: 冶金工业出版社, 2007: 26.
    Zhou Z H, Uher C. Apparatus for Seebeck Coefficient and Electrical Resistivity Measurements of Bulk Thermoelectric Materials at High Temperature [J]. Rev Sci Instrum, 2005, 76(2): 023901.
    Zhu P W, Imai Y, Isoda Y, et al. Composition-Dependent Thermoelectric Properties of PbTe Doped with Bi2Te3 [J]. J Alloy Compd, 2006, 420(1-2): 233-236.
    Barnard R D. Thermoelectricity in Metals and Alloys [M]. London: Taylor Francis, 1972.
    Ovsyannikov S V, Shchennikov V V, Vorontsov G V, et al. Giant Improvement of Thermoelectric Power Factor of Bi2Te3 under Pressure [J]. J Appl Phys, 2008, 104(5): 053713.
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出版历程
  • 收稿日期:  2010-06-08
  • 修回日期:  2010-09-09
  • 刊出日期:  2011-08-15

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