高压及热处理对氮碳薄膜激光诱导荧光效率的影响

赵菁; 车荣钲; 徐积仁; 康宁; 刘景; 杨洋

doi:10.11858/gywlxb.1999.03.003

高压及热处理对氮碳薄膜激光诱导荧光效率的影响

doi: 10.11858/gywlxb.1999.03.003

赵菁^1,,
车荣钲²,
徐积仁²,
康宁²,
刘景¹,
杨洋¹

1.
中国科学院高能物理研究所同步辐射实验室，北京 100039；
2.
中国科学院物理研究所，北京 100080

详细信息

通讯作者:
赵菁

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出版历程
- 收稿日期: 1998-09-22
- 修回日期: 1999-02-02
- 刊出日期: 1999-09-05

Effects of High Pressure and Thermal Treatments on Photoluminescence Efficiency of CNx Film

1.
Beijing Synchrotron Radiation Laboratory, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China;
2.
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

More Information

Corresponding author: ZHAO Jing

摘要

摘要: 应用激光激发荧光光谱实验对经热处理后及高压条件下的氮碳薄膜荧光光谱进行了测量分析。实验显示，热处理效应和高压效应均导致薄膜荧光效率降低，前者表现为不可恢复，后者为可恢复即卸压后荧光效率的恢复，表明导致荧光光谱效率降低的微观机制不同，为氮碳薄膜荧光模型提供了新的实验证据。
- 氮碳薄膜 /
- 金刚石高压容器 /
- 荧光光谱
Abstract: Laser induced photoluminescence of carbon nitride films was measured under high pressures up to 24 GPa and after thermal treatment at different temperatures. The experimental results show that both effects of thermal treatment and high pressure induce the decrease of photoluminescence strength, but the former is non-recoverable while the later recoverable after release of pressure to ambient atmosphere. The two kinds of quenching of photoluminescence are attributed to different mechanism. Our results supply a further experimental evidence to support the active PL center model of the undistorted aromatic sp2 cluster with various size and embedded in sp3 bond matrix.
- carbon nitride film /
- diamond anvil cell /
- photoluminescence

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参考文献(17)

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