立方氮化硼单晶-金刚石薄膜异质p-n结

张铁臣; 高春晓; 王成新; 季燕菊; 邹广田

doi:10.11858/gywlxb.1999.03.002

立方氮化硼单晶-金刚石薄膜异质p-n结

doi: 10.11858/gywlxb.1999.03.002

吉林大学超硬材料国家重点实验室，吉林长春 130023

详细信息

通讯作者:
张铁臣

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出版历程
- 收稿日期: 1998-09-14
- 修回日期: 1998-10-26
- 刊出日期: 1999-09-05

Cubic Boron Nitride Crystal-Diamond Film Heterjunction p-n Diode

State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023, China

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Corresponding author: ZHANG Tie-Chen

摘要

摘要: 在Si中掺杂N型片状立方氮化硼单晶的(111)面上，利用热灯丝化学气相沉积方法生长了掺B的p型金刚石薄膜，从而制得了立方氮化硼单晶-金刚石薄膜异质p-n结，测试了该p-n结的V-A特性，结果表明其整流特性良好。
- 金刚石多晶膜 /
- cBN单晶体 /
- p-n结
Abstract: In this paper, B doped P type diamond film was grown on Si doped N type cubic boron nitride (cBN) flaky crystal by means of hot filament CVD method. A heterjunction p-n diode was fabricated. The electrical test shows that it has high rectification efficiency.
- crystalline diamond film /
- cBN crystal /
- p-n junction

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参考文献(4)

Zou Guangtian, Gao Chunxiao, Jin Zengsun, et al. Characteristic of Epitaxial Growth of Diamond Film on Cubic Boron Nitride Surface by DC Glow Discharge Chemical Vaper Deposition. In: Saito S, Fujimori N, Fukunaga O, et al, eds. Advances in New Diamond Science and Technologe. Tokyo: MYU, 1994: 291.

Tomikawa T, Nishibayashi Y, Shikata S, et al. Diamond and Related Materials, 1994, 3: 1389.

张铁臣, 王明光, 郭伟力, 等. 髙压物理学报, 1998, 12(3): 168.

Gao Chunxiao, Zhang Tiechen, Zou Guangtian, et al. Chin Phys Lett, 1996, 13: 779.

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